PBSS5160DS,115 datasheet

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Маркировка

PBSS5160DS,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS5160DS,115 Collector- Emitter Voltage Vceo Max: - 60 V Configuration: Dual Continuous Collector Current: - 1 A Current - Collector (ic) (max): 770mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 185MHz ID_COMPONENTS: 1949759 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 2 A Maximum Operating Frequency: 185 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 420mW Power Dissipation: 290 mW Series: - Transistor Polarity: PNP/PNP Transistor Type: 2 PNP (Dual) Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 2 A Gain Bandwidth Product fT: 185 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 200 at 1 mA at 5V Maximum Power Dissipation: 290 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS5160DS T/R Other Names: 568-4351-2, 934058121115, PBSS5160DS T/R
Количество страниц

14 шт.
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133,07 KB